Title :
Development of high fMAX SiGe HBT with air-bridge
Author :
Li, Kaicheng ; Liu, Daoguang ; Liu, Rongkan ; Zhang, Jiang ; Li, Rongqiang ; Liu, Luncai ; Xu, Wanjing ; He, Kaiquan ; Liu, Yukui ; Xu, Shiliu ; Hu, Gagnyi ; Xu, Xueliang ; Chen, Guangbing ; Koenig, Ulf ; Gruhle, Adreas ; Kibbel, Horst ; Zeiler, Ulrich
Author_Institution :
Nat. Labs of Analog IC, Chongqing, China
Abstract :
In this paper. a SiGe HBT was described, which was based on a unique process technology. To characterize the SiGe HBT, HP85 10C network analyzer, HP83650A synthetic signal sources, HP8517b S parameter measuring systems etc. have been used for measuring radiofrequency performance of SiGe HBT. The measurements showed satisfactory results. The SiGe HBT cutoff frequency fT is 108 GHz, and the maximum oscillation frequency is 157 GHz.
Keywords :
Ge-Si alloys; S-parameters; heterojunction bipolar transistors; radiofrequency integrated circuits; 108 GHz; 157 GHz; Ge-Si; HP83650A synthetic signal sources; HP85 10C network analyzer; HP8517b S parameter measuring systems; SiGe HBT; air bridge; maximum oscillation frequency; radiofrequency performance; Capacitance; Cutoff frequency; Doping; Electrical resistance measurement; Etching; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Morphology; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435269
