DocumentCode :
3269448
Title :
Efficiency and threshold current optimization for 850 nm oxidized VCSELs using a mirror etching technique
Author :
Lin, Chao-Kun ; MacDougal, Michael H. ; Bond, Aaron E. ; Dapkus, P.Daniel
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Volume :
2
fYear :
1997
fDate :
10-13 Nov 1997
Firstpage :
348
Abstract :
Owing to their commercial application to data links, 850 nm VCSELs have been studied extensively to improve the efficiency and reduce the threshold current. However, there are significant tradeoffs that must be made between these two parameters in a VCSEL design. To optimize the VCSELs performance, the DBR design is optimized based on the calculated reflectivity. In this presentation, we report the experimental optimization VCSEL design for a given active region design using mirror etching technique. The data illustrate the design tradeoffs and result in very high performance devices
Keywords :
distributed Bragg reflector lasers; etching; laser mirrors; optical fabrication; surface emitting lasers; 850 nm; DBR design; efficiency; mirror etching; optimization; oxidized VCSEL; reflectivity; threshold current; Apertures; Design optimization; Distributed Bragg reflectors; Etching; Gallium arsenide; Mirrors; Oxidation; Reflectivity; Threshold current; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.645461
Filename :
645461
Link To Document :
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