Title :
The effect of calcination temperature on nanosized tin oxide thin film
Author :
Liu, Xiaodi ; Zhang, Dacheng ; Li, Ting ; Wei, Wang ; Dayu, Tian ; Kui, Luo
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The effect of calcination on nanosized tin oxide film prepared by direct current reactive magnetron sputtering is investigated. The tin oxide semiconductors were calcined at different temperatures ranging from 400°C to 900°C. The testing results from SEM, XRD, XPS and the HP4145B semiconductor analyzer show that the composition, crystallinity and the resistance of the thin films change with the variation of calcination temperature.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; calcination; electric resistance; nanotechnology; scanning electron microscopy; sputtering; thin films; tin compounds; 400 to 900 degC; HP4145B semiconductor analyzer; SEM; XPS; XRD; calcination temperature; crystallinity; direct current reactive magnetron sputtering; nanosized tin oxide thin film; resistance; tin oxide semiconductors; Calcination; Magnetic semiconductors; Semiconductor device testing; Semiconductor films; Semiconductor thin films; Sputtering; Temperature distribution; Tin; Transistors; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435284
