DocumentCode :
3269699
Title :
Mask enhancer technology on ArF immersion tool for 45nm-node CMOS with 0.249μm2 SRAM contact layer fabrication
Author :
Yuito, Takashi ; Wiaux, Vincent ; Van Look, Lieve ; Vandenberghe, Geert ; Irie, Shigeo ; Matsuo, Takahiro ; Misaka, Akio ; Endo, Masayuki ; Sasago, Masaru
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2005
fDate :
25-28 Oct. 2005
Firstpage :
14
Lastpage :
15
Abstract :
We achieve the contact layer printing of 0.249μm2 SRAM by using mask enhancer (ME) technology and 0.85NA ArF immersion tool. In conclusion, we strongly propose that ME is one of the most effective solutions to perform 45nm-node contact printing with sufficient lithographic performance for 45nm-node LSI manufacturing.
Keywords :
CMOS memory circuits; SRAM chips; immersion lithography; large scale integration; nanolithography; phase shifting masks; ultraviolet lithography; 0.85NA ArF immersion tool; 45 nm; ArF; LSI manufacturing; SRAM chips; contact layer printing; immersion exposure technique; mask enhancer technology; phase shifting mask; Apertures; CMOS technology; Fabrication; Focusing; Isolation technology; Lighting; Manufacturing; Printing; Random access memory; Textile industry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
Type :
conf
DOI :
10.1109/IMNC.2005.203714
Filename :
1595190
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3269699
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