Newly developed RELACS process and materials for 65nm node device and beyond

Author

Terai, M. ; Kumada, Tatsuya ; Ishibashi, Takeo ; Hanawa, Tetsuro

Author_Institution

Mitsubishi Electr. Corp, Hyogo, Japan

fYear

2005

fDate

25-28 Oct. 2005

Firstpage

20

Lastpage

21

Abstract

To meet market´s demands for high performance devices, we have studied various resolution enhancement techniques (RET), such as off axis illumination, phase shift masks, optical proximity correction, resist thermal reflow, and chemical shrinkage process etc. RELACS (resolution enhancement lithography assisted by chemical shrink) is one of the most useful technology among chemical shrink processes. We have introduced KrF-RELACS process into mass production phase. However, in the case of ArF lithography, we are not able to be satisfied with shrinkage performance of conventional RELACS materials. To improve this matter, we paid attention to the chemically difference of side chain between KrF resist and ArF resist polymers.

Keywords

argon compounds; krypton compounds; nanolithography; phase shifting masks; proximity effect (lithography); ultraviolet lithography; 65 nm; ArF; ArF lithography; ArF resist polymers; KrF; KrF resist polymers; KrF-RELACS process; RELACS materials; RELACS process; chemical shrink process; mass production phase; resolution enhancement lithography; Chemical processes; Chemical technology; Lighting; Lithography; Mass production; Optical devices; Optical materials; Polymers; Resists; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2005 International

Print_ISBN

4-9902472-2-1

Type

conf

DOI

10.1109/IMNC.2005.203717

Filename

1595193