Comparative study of ZnO and GaN films grown by MOCVD

Author

Li, Wang ; Yong, Pu ; Chunlan, Mo ; Wenqing, Fang ; Fengyi, Jiang

Author_Institution

Educ. Minist. Eng. Res. Center for Luminescence Materials & Devices, Nanchang Univ., China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2374

Abstract

ZnO and GaN films were grown by MOCVD. AFM, DCXRD and photoluminescence were used to study the surface morphologies, structural and optical properties of the films. By a comparison of the measurement results, it was shown that the structural and optical properties of the ZnO films are superior to the GaN films. The (102) FWHM and the free/bound exciton intensity ratio of the ZnO films are the best results ever reported for ZnO films. To evaluate the overall quality of the GaN films, an InGaN/GaN MQW LED was fabricated and the LED showed good I-V characteristics and its light output power was 6 mW at 20 mA, which indicated the good quality of the GaN layers and then indirectly suggested the high quality of the ZnO films.

Keywords

II-VI semiconductors; III-V semiconductors; MOCVD; atomic force microscopy; gallium compounds; light emitting diodes; optical properties; photoluminescence; semiconductor growth; semiconductor thin films; surface morphology; wide band gap semiconductors; zinc compounds; 20 mA; 6 mW; AFM; FWHM; GaN; InGaN-GaN; MOCVD; ZnO; free/bound exciton intensity ratio; gallium nitride films; indium gallium nitride; optical properties; photoluminescence; quantum well LED; structural properties; surface morphology; wide gap semiconductor; zinc oxide films; Excitons; Gallium nitride; Light emitting diodes; MOCVD; Optical films; Photoluminescence; Power generation; Quantum well devices; Surface morphology; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435324

Filename

1435324