Title :
3D topography simulation for structural analysis in nanometer semiconductor process
Author :
Lee, Jun-Gu ; Won, Taeyoung
Author_Institution :
Dept. of Electr. Eng., Inha Univ., Incheon, South Korea
Abstract :
In this paper, we propose a cell advancing method which demonstrates the improvement in comparison with the traditional cell-removal method for accurate topography simulation. For the subsequent finite element method (FEM) procedure, mesh generation is conducted in the simulated volume of topography.
Keywords :
electronic engineering computing; mesh generation; nanoelectronics; semiconductor process modelling; surface topography; 3D topography simulation; accurate topography simulation; cell advancing method; finite element method; mesh generation; nanometer semiconductor process; structural analysis; traditional cell-removal method; Analytical models; Computational modeling; Computer interfaces; Etching; Finite element methods; Level set; Mesh generation; Nanostructures; Surface topography; Tracking loops;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
DOI :
10.1109/IMNC.2005.203772
