An Investigation of Concurrent Error Detection over Binary Galois Fields in CNTFET and QCA Technologies

Permanent and temporary transient faults are the main concern in modern very large scale integrated circuits (VLSI). The main reason for such high vulnerability of the modern integrated circuit is their high integration density. Miniaturization of devices resulted in scaling their properties along with their size and thus making them a subject to induced faults and permanent faults. As the research progresses towards shrinking the technology even further to 15nm or below with potential CMOS replacement strategies such as carbon nano-tube field effect transistors (CNTFET) and quantum cellular automata (QCA) cells, the notion of fault susceptibility increases even further. Owing to these facts, this paper investigates the performance of standard concurrent error detection (CED) scheme over CNTEFETs and QCA technologies using normal basis (NB) finite field multiplier circuit as a test bench. The results are then compared with their CMOS equivalents which are believed to be the first reported attempt to the best of the authors´knowledge. The detailed experimental analysis of CMOS with CNTFET design proves that the emerging technologies perform better for error tolerant designs in terms of area, power, and delay as compared to its CMOS equivalent.