Kinetics of impurity free vacancy disordering in GaAs/AlGaAs heterostructures

Despite the increasing use of the technology of intermixing of quantum confined heterostructures to fabricate optoelectronic and photonic integrated circuits, the majority of research to date has been directed at experimental investigations of the processes. Although the concept was first reported in 1981 no comprehensive mechanism of the process was presented until 1988. The model described here allows a non-equilibrium group III vacancy concentration in a GaAs-AlGaAs heterostructure to be related to the amount of intermixing induced during subsequent annealing