Title :
Stripe-size dependent quantum well intermixing induced by impurity-free vacancy disordering
Author :
Son, N.J. ; Park, B.H. ; Bae, J.H. ; Kwak, K.S. ; Han, H. ; Kwon, O´Dae
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea
Abstract :
In conclusion we have described the impurity-free vacancy disordering of AlGaAs-AlGaAs GRIN quantum well structures by a single-step rapid thermal annealing (RTA). We have used the samples with different mesa widths to investigate the spectral shifts in the photoluminescence (PL) and lasing characteristics
Keywords :
aluminium compounds; gallium arsenide; gradient index optics; photoluminescence; quantum well lasers; semiconductor quantum wells; vacancies (crystal); AlGaAs-AlGaAs; AlGaAs-AlGaAs GRIN quantum well structures; QW lasing characteristics; impurity-free vacancy disordering; mesa widths; photoluminescence; single-step rapid thermal annealing; spectral shifts; stripe-size dependent quantum well intermixing; Annealing; Artificial intelligence; Chemical vapor deposition; Etching; Gallium arsenide; Gold; Integrated circuit technology; Optical device fabrication; Photonic integrated circuits; Zinc;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645511
