DocumentCode :
3271760
Title :
Fabrication of self-organized nanopatterns by angle-controlled ion sputtering
Author :
Sekiba, Daiichiro
Author_Institution :
Inst. for Solid State Phys., Tokyo Univ., Kashiwashi, Japan
fYear :
2005
fDate :
25-28 Oct. 2005
Firstpage :
244
Lastpage :
245
Abstract :
By using ion sputtering, one can simply induce ripple-like nanoscale patterns on various solid surfaces [Navez, 1962]. On single metal crystals, the main parameters, dominating the pattern formation, are the substrate temperature (Ts) and the ion incidence angle θ [Sekiba, 2002]. An example shows the same Cu(100) surface after Ar+ sputtered with different sputtering conditions: (a) Ts ∼ room temperature and θ ∼ 0 degree from surface normal, (b) Ts ∼ 180 K and θ ∼ 70 degree. The size of the sample is Φ8 mm and 1 mm thickness. The current of irradiated ion was ∼ 2 μA, and the sputtering duration is ∼ 10 min in both cases. Thus at relatively higher temperature the formed pattern reflects the symmetry of the substrate due to the anisotropic atom diffusion.
Keywords :
nanopatterning; sputtering; 1 mm; angle-controlled ion sputtering; anisotropic atom diffusion; ion irradiation; metal crystals; nanoscale patterns; self-organized nanopatterns; solid surfaces; sputtering conditions; Anisotropic magnetoresistance; Fabrication; Magnetic anisotropy; Magnetic films; Nanopatterning; Optical films; Perpendicular magnetic anisotropy; Sputtering; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
Type :
conf
DOI :
10.1109/IMNC.2005.203829
Filename :
1595305
Link To Document :
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