Title :
Analysis of backscattering phenomenon from drain region in a silicon nanodiode
Author :
Tsutsumi, Toshiyuki ; Tomizawa, Kazutaka
Author_Institution :
Dept. of Comput. Sci., Meiji Univ., Kanagawa, Japan
Abstract :
In this paper, the backscattering phenomenon from drain region in a silicon nanodiode was analyzed. A Monte Carlo simulation is employed for analyzing the backscattering effect in a short channel device.
Keywords :
Monte Carlo methods; backscatter; elemental semiconductors; nanoelectronics; nanostructured materials; semiconductor diodes; silicon; Monte Carlo simulation; Si; backscattering phenomenon; drain region; short channel device; silicon nanodiode; Acceleration; Acoustic devices; Acoustic scattering; Anisotropic magnetoresistance; Backscatter; Electrons; Nanoscale devices; Optical scattering; Phonons; Silicon;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
DOI :
10.1109/IMNC.2005.203838
