DocumentCode :
3271939
Title :
SoxFET: three-dimensional selective oxidation channel MOSFET
Author :
Cho, Young-Kyun ; Tae Moon Rob ; Kim, Jongdae
Author_Institution :
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fYear :
2005
fDate :
25-28 Oct. 2005
Firstpage :
266
Lastpage :
267
Abstract :
The three-dimensional selective-oxidation channel MOSFET with the streamline channel shape and the self-constructed raised source/drain structure was fabricated using the 0.5 μm design-ruled CMOS technology.
Keywords :
CMOS integrated circuits; MOSFET; oxidation; 0.5 micron; 3D selective oxidation channel MOSFET; SoxFET; design-ruled CMOS; drain structure; self-constructed raised source; streamline channel shape; Degradation; Dry etching; FinFETs; Lithography; MOSFET circuits; Oxidation; Shape; Silicon compounds; Thermal conductivity; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
Type :
conf
DOI :
10.1109/IMNC.2005.203840
Filename :
1595316
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3271939
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