Title :
A 50% efficiency InGaP/GaAs HBT power amplifier module for 1.95 GHz wide-band CDMA handsets
Author :
Nishimura, T.B. ; Tanomura, M. ; Azuma, K. ; Nakai, K. ; Hasegawa, Y. ; Shimawaki, H.
Author_Institution :
Compound Semicond. Device Div., NEC Corp., Kawasaki, Japan
Abstract :
A 0.1 cc high-efficiency power amplifier multi-chip module (MCM) has been developed using InGaP/GaAs heterojunction bipolar transistors (HBTs) for 1.95 GHz wide-band CDMA handsets. Under 3.5 V operation, the MCM achieved an output power P/sub 0ut/ of 26.3 dBm, an excellent power-added efficiency (PAE) of 50.5%, and a high associated gain G/sub a/ of 28.5 dB with an adjacent channel leakage power ratio (ACPR) of -35 dBc at a 5 MHz off-center frequency band. The MCM also exhibited excellent PAEs of more than 40% even at a low supply voltage of 1.5 V.
Keywords :
III-V semiconductors; UHF bipolar transistors; UHF power amplifiers; cellular radio; code division multiple access; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; multichip modules; power bipolar transistors; telephone sets; 1.5 to 3.5 V; 1.95 GHz; 28.5 dB; 40 to 50.5 percent; ACPR; HBT power amplifier module; InGaP-GaAs; InGaP/GaAs HBT; W-CDMA handsets; adjacent channel leakage power ratio; amplifier multi-chip module; heterojunction bipolar transistors; high-efficiency power amplifier; power amplifier MCM; power-added efficiency; wideband CDMA handsets; Broadband amplifiers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Low voltage; Multiaccess communication; Power amplifiers; Power generation; Telephone sets;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935635
