Title :
RF power performance of LDMOSFETs on SOI: an experimental comparison with bulk Si LDMOSFETs
Author :
Fiorenza, J.G. ; del Alamo, Jesus A.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
We have simultaneously fabricated RF power LDMOSFETs on SOI and bulk-silicon wafers using an identical process. This paper directly compares their RF power performance at 1.9 GHz. We use this comparison to assess the suitability of SOI for RF power applications. The gain and linearity of the SOI LDMOSFETs match those of the bulk-silicon devices. The SOI devices exhibit substantially improved power efficiency, up to 8 percentage points. This improvement in PAE is shown to be related to reduced parasitic substrate loss in the SOI LDMOSFETs.
Keywords :
UHF field effect transistors; losses; power MOSFET; semiconductor device measurement; silicon-on-insulator; 1.9 GHz; PAE improvement; RF power MOSFETs; RF power performance; SOI LDMOSFETs; SOI wafers; Si; bulk Si MOSFETs; bulk Si wafers; device gain; device linearity; laterally diffused MOSFETs; parasitic substrate loss reduction; power LDMOSFETs; power efficiency; High power amplifiers; Implants; Laboratories; Linearity; MOSFETs; Power measurement; Radio frequency; Radiofrequency amplifiers; Silicon on insulator technology; Telephone sets;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935638
