RF power performance of LDMOSFETs on SOI: an experimental comparison with bulk Si LDMOSFETs

Author

Fiorenza, J.G. ; del Alamo, Jesus A.

Author_Institution

Microsystems Technol. Lab., MIT, Cambridge, MA, USA

fYear

2001

fDate

20-22 May 2001

Firstpage

43

Lastpage

46

Abstract

We have simultaneously fabricated RF power LDMOSFETs on SOI and bulk-silicon wafers using an identical process. This paper directly compares their RF power performance at 1.9 GHz. We use this comparison to assess the suitability of SOI for RF power applications. The gain and linearity of the SOI LDMOSFETs match those of the bulk-silicon devices. The SOI devices exhibit substantially improved power efficiency, up to 8 percentage points. This improvement in PAE is shown to be related to reduced parasitic substrate loss in the SOI LDMOSFETs.

Keywords

UHF field effect transistors; losses; power MOSFET; semiconductor device measurement; silicon-on-insulator; 1.9 GHz; PAE improvement; RF power MOSFETs; RF power performance; SOI LDMOSFETs; SOI wafers; Si; bulk Si MOSFETs; bulk Si wafers; device gain; device linearity; laterally diffused MOSFETs; parasitic substrate loss reduction; power LDMOSFETs; power efficiency; High power amplifiers; Implants; Laboratories; Linearity; MOSFETs; Power measurement; Radio frequency; Radiofrequency amplifiers; Silicon on insulator technology; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE

Conference_Location

Phoenix, AZ, USA

ISSN

1529-2517

Print_ISBN

0-7803-6601-8

Type

conf

DOI

10.1109/RFIC.2001.935638

Filename

935638