DocumentCode
327216
Title
A high speed and low power SOI inverter using active body-bias
Author
Gil, Joonho ; Je, Minkyu ; Lee, Jongho ; Shin, Hyungcheol
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
fYear
1998
fDate
10-12 Aug. 1998
Firstpage
59
Lastpage
63
Abstract
We propose a new high speed and low power SOI inverter that can operate with efficient body-bias control and free supply voltage. The performance of the proposed circuit is evaluated by both the BSIM3SOI circuit simulator and the ATLAS device simulator, and then compared with other reported SOI circuits. The proposed circuit is shown to have excellent characteristics. At the supply voltage of 1.5 V, the proposed circuit operates 27% faster than the conventional SOI circuit with the same power dissipation.
Keywords
CMOS logic circuits; high-speed integrated circuits; integrated circuit layout; logic design; logic gates; low-power electronics; silicon-on-insulator; 1.5 V; ATLAS device simulator; BSIM3SOI circuit simulator; Si; active body-bias; body-bias control; free supply voltage; high speed inverter; low power SOI inverter;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Power Electronics and Design, 1998. Proceedings. 1998 International Symposium on
Conference_Location
Monterey, CA, USA
Print_ISBN
1-58113-059-7
Type
conf
Filename
708156
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