Title :
The design of CMOS transimpedance amplifier based on BSIM large-signal model
Author :
Chin-Wei Kuo ; Chao-Chih Hsiao ; Shih-Cheng Yang ; Yi-Jen Chan
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
A modified BSIM CMOS RF large-signal model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behavior. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated based on this model. A 0.35 /spl mu/m CMOS technology was used for circuit realization, and a capacitive-peaking [1-3] design to improve the bandwidth of TZ amplifier was also proposed and investigated.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; high-speed integrated circuits; integrated circuit modelling; integrated optoelectronics; optical fibre communication; optical receivers; 0.35 micron; BSIM large-signal model; BSIM3v3; CMOS technology; CMOS transimpedance amplifier; bandwidth; capacitive-peaking design; circuit realization; microwave behavior; optical communication; passive components; CMOS technology; Integrated circuit technology; MOSFETs; Optical amplifiers; Optical fiber communication; Optical receivers; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling; Substrates;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935667
