Title :
Vertical cavity surface emitting lasers based on vertically coupled quantum dots
Author :
Ledentsov, N.N. ; Ustinov, V.M. ; Lott, J.A. ; Egorov, A.Yu. ; Zhukov, A.E. ; Maximov, M.V. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Bimberg, D.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
For the present study device structures are prepared by molecular beam epitaxy on (001) (n+)GaAs substrates. The vertical cavity quantum dots (VCQDs) consist of vertically coupled stacks of quasi-pyramidal QDs formed by InGaAs depositions with an average thickness of 1.2 nm. The planes with QDs are separated by 4 nm-thick GaAs barrier layers. The intrastack carrier wavefunctions overlap resulting in periodic quantum potentials
Keywords :
indium compounds; (n+)GaAs substrates; 1.2 nm; 4 nm; GaAs; GaAs barrier layers; InGaAs; InGaAs depositions; average thickness; intrastack carrier wavefunctions; molecular beam epitaxy; periodic quantum potentials; quasi-pyramidal QDs; vertical cavity quantum dots; vertical cavity surface emitting lasers; vertically coupled quantum dots; vertically coupled stacks; Apertures; Gallium arsenide; Laser theory; Microcavities; Optical coupling; Quantum dot lasers; Surface emitting lasers; Threshold current; US Department of Transportation; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645539
