Title :
15 GHz wideband amplifier with 2.8 dB noise figure in SiGe bipolar technology
Author :
Knapp, H. ; Zoschg, D. ; Meister, T. ; Aufinger, K. ; Boguth, S. ; Treitinger, L.
Author_Institution :
Corporate Res., Infineon Technol. AG, Munich, Germany
Abstract :
We present a wideband amplifier with 12 dB gain and a 3-dB bandwidth of 15 GHz. The noise figure is 2.8 dB for frequencies up to 10 GHz and 4 dB at 15 GHz. The circuit is manufactured in an advanced SiGe bipolar technology and consumes 7.2 mA from a 3.3 V supply.
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit noise; semiconductor materials; wideband amplifiers; 12 dB; 15 GHz; 2.8 to 4 dB; 3.3 V; 7.2 mA; HBT; LNA; SiGe; SiGe bipolar technology; broadband amplifier; low-noise amplifiers; monolithic wideband amplifier; Bandwidth; Broadband amplifiers; Circuits; Frequency response; Gain; Germanium silicon alloys; Inductors; Noise figure; Noise measurement; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935695
