Title :
Impact of local interconnects on ESD design
Author :
Scholz, Mirko ; Shih-Hung Chen ; Hellings, Geert ; Linten, Dimitri ; Boschke, Roman
Author_Institution :
Logic Technol., Device Reliability Group, imec, Heverlee, Belgium
Abstract :
Local interconnect (LI) as a contact scheme impacts significant the behavior of protection devices under Electro Static Discharge (ESD) stress. The narrow LI reduces the ESD robustness. At the same time, the on-resistance increases. This makes ESD protection design in future technology nodes more challenging, as the ESD design windows continuously shrinks.
Keywords :
electrostatic discharge; integrated circuit design; integrated circuit interconnections; ESD protection design; contact scheme; electro static discharge stress; local interconnects; on-resistance; protection devices; Anodes; Cathodes; Current density; Electrostatic discharges; Logic gates; Robustness; Stress; CMOS; ESD design; VLSI; component-level ESD; interconnects; reliability;
Conference_Titel :
IC Design & Technology (ICICDT), 2015 International Conference on
Conference_Location :
Leuven
DOI :
10.1109/ICICDT.2015.7165911
