Title :
Output properties of HEMT of nanocrystalline/crystalline Si heterojunctions
Author :
Shan, Feng ; Wei, Wensheng
Author_Institution :
Coll. of Phys. & Electron. Inf. Eng., Wenzhou Univ., Wenzhou, China
Abstract :
A kind of high electron mobility transistor (HEMT) of heterojunction with nanocrystalline Si film with crystalline Si layer (nc-Si/c-Si) was designed in this paper. Based on the output current model of HEMT, the influence of densities for interface charge states (n) at junction and mean sizes (d) of nanocrystalline Si in the film on the drain current (IDS) from the devices was analyzed by numerical simulation. The results indicate that IDS of the HEMTs increases with the n and d. Furthermore, the breakdown voltage (VBR) and pinch-off voltage (VP) vary with n and d. In addition, the device transconductance (gm) relates closely to gate voltage (VGS) and n.
Keywords :
electric breakdown; high electron mobility transistors; nanostructured materials; HEMT; breakdown voltage; device transconductance; drain current; gate voltage; interface charge states; nanocrystalline silicon heterojunctions; output properties; pinch off voltage; Electric fields; Films; Grain size; HEMTs; Interface states; Logic gates; Silicon; grain sizes; high electron mobility transistor; interface state; nanocrystalline silicon;
Conference_Titel :
Electric Information and Control Engineering (ICEICE), 2011 International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-8036-4
DOI :
10.1109/ICEICE.2011.5777254
