Title :
Device modelling for 60 GHz radio front-ends in 65 nm CMOS
Author :
Tao, Sha ; Rodriguez, Saul ; Rusu, Ana ; Ismail, Mohammed
Author_Institution :
Sch. of Inf. & Commun. Technol., RaMSiS Group, R. Inst. of Technol., Stockholm, Sweden
Abstract :
This paper presents an electromagnetic simulation-based modelling solution for active and passive devices which targets 60 GHz front-end integrated circuits. An EM model, using existing transistor compact models as core, is developed to account for the parasitic elements due to wiring stacks. A spiral inductor lumped model, based on EM simulation S-parameter data is also derived. The models are process and layout dependent, which have been verified by the design of a low noise amplifier in a 60 GHz radio front-end.
Keywords :
CMOS integrated circuits; electromagnetic waves; millimetre wave circuits; CMOS; EM model; device modelling; electromagnetic simulation-based modelling; frequency 60 GHz; parasitic elements; radio front-ends; size 65 nm; spiral inductor lumped model; wiring stacks; Circuit simulation; Electromagnetic devices; Electromagnetic modeling; Inductors; Integrated circuit modeling; Low-noise amplifiers; Scattering parameters; Semiconductor device modeling; Spirals; Wiring; 60 GHz; ADS; EM simulation; LNA; mm-wave MOS model; nanoscale CMOS; spiral inductor model;
Conference_Titel :
NORCHIP, 2009
Conference_Location :
Trondheim
Print_ISBN :
978-1-4244-4310-9
Electronic_ISBN :
978-1-4244-4311-6
DOI :
10.1109/NORCHP.2009.5397803
