DocumentCode
327375
Title
Application of RF LDMOS power transistors for 2.2 GHz wideband-CDMA
Author
Wood, Alan ; Brakensiek, Warren
Author_Institution
Semicond. Product Sector, Motorola Inc., Phoenix, AZ, USA
fYear
1998
fDate
9-12 Aug 1998
Firstpage
309
Lastpage
312
Abstract
Wideband CDMA was conceived to carry high bit rate data and video information in addition to voice traffic. The IMT2000 standard has adopted the 2.11 to 2.17 GHz band for this service, posing the design challenge of a higher operating frequency band than the PCS (1.8-1.99 GHz) and wider modulation bandwidth for the signals. This paper describes the results for a 60 W single-ended and a 120 W push-pull RF LDMOS device characterized with W-CDMA signals in the IMT2000 frequency band
Keywords
UHF power amplifiers; broadband networks; cellular radio; code division multiple access; differential amplifiers; microwave power transistors; power MOSFET; radio equipment; 120 W; 2.11 to 2.17 GHz; 60 W; IMT2000 standard; RF LDMOS power transistors; W-CDMA; modulation bandwidth; push-pull RF LDMOS device; single-ended RF LDMOS device; wideband-CDMA; Bandwidth; Impedance; Linearity; MOSFETs; Multiaccess communication; Personal communication networks; Power transistors; Radio frequency; Radiofrequency amplifiers; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE
Conference_Location
Colorado Springs, CO
Print_ISBN
0-7803-4988-1
Type
conf
DOI
10.1109/RAWCON.1998.709198
Filename
709198
Link To Document