Title :
Application of RF LDMOS power transistors for 2.2 GHz wideband-CDMA
Author :
Wood, Alan ; Brakensiek, Warren
Author_Institution :
Semicond. Product Sector, Motorola Inc., Phoenix, AZ, USA
Abstract :
Wideband CDMA was conceived to carry high bit rate data and video information in addition to voice traffic. The IMT2000 standard has adopted the 2.11 to 2.17 GHz band for this service, posing the design challenge of a higher operating frequency band than the PCS (1.8-1.99 GHz) and wider modulation bandwidth for the signals. This paper describes the results for a 60 W single-ended and a 120 W push-pull RF LDMOS device characterized with W-CDMA signals in the IMT2000 frequency band
Keywords :
UHF power amplifiers; broadband networks; cellular radio; code division multiple access; differential amplifiers; microwave power transistors; power MOSFET; radio equipment; 120 W; 2.11 to 2.17 GHz; 60 W; IMT2000 standard; RF LDMOS power transistors; W-CDMA; modulation bandwidth; push-pull RF LDMOS device; single-ended RF LDMOS device; wideband-CDMA; Bandwidth; Impedance; Linearity; MOSFETs; Multiaccess communication; Personal communication networks; Power transistors; Radio frequency; Radiofrequency amplifiers; Wideband;
Conference_Titel :
Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE
Conference_Location :
Colorado Springs, CO
Print_ISBN :
0-7803-4988-1
DOI :
10.1109/RAWCON.1998.709198
