Title :
A 10 GHz VCO in SiGe BiCMOS Technology
Author :
Xuefeng, Guo ; Zhigong, Wang ; Zhiqun, Li
Author_Institution :
Inst. of RF-& OE-ICs, Southeast Univ., Nanjing
Abstract :
In this paper, a 10 GHz VCO (voltage controlled oscillator) based on 0.35 um SiGe BiCMOS technology is presented. It is designed for 10 Gb/s CRC (clock recovery circuit) in optical communication systems and X band wireless applications. Cross coupled differential topology is adopted. It can operate from 9.78 GHz to 10.35 GHz with a phase noise of -106 dBc/Hz at 1 MHz offset. For the 1.8 V supply voltage, the total power consumption is 12 mW. And the chip area is only 0.17 mm2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; voltage-controlled oscillators; BiCMOS technology; Cross coupled differential topology; SiGe; X band wireless applications; bit rate 10 Gbit/s; chip area; clock recovery circuit; frequency 10 GHz; optical communication; phase noise; power 12 mW; size 0.35 micron; voltage 1.8 V; voltage controlled oscillator; BiCMOS integrated circuits; Circuit topology; Clocks; Coupling circuits; Cyclic redundancy check; Germanium silicon alloys; Optical design; Optical fiber communication; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Communications, Circuits and Systems Proceedings, 2006 International Conference on
Conference_Location :
Guilin
Print_ISBN :
0-7803-9584-0
Electronic_ISBN :
0-7803-9585-9
DOI :
10.1109/ICCCAS.2006.285179
