• DocumentCode
    327388
  • Title

    Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition

  • Author

    Kato, Hiromitsu ; Sakai, Shingo ; Takami, Akihiro ; Ohki, Yoshimichi ; Ishii, Keisuke

  • Author_Institution
    Dept. of Electr. & Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan
  • fYear
    1998
  • fDate
    22-25 Jun 1998
  • Firstpage
    368
  • Lastpage
    371
  • Abstract
    Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF 4, and the dielectric strength was measured with a self-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented
  • Keywords
    dielectric thin films; electric breakdown; electric strength; fluorine; plasma CVD coatings; silicon compounds; CF4; F-doped SiO2 films; SiO2:F; chemical vapor deposition; dielectric breakdown; dielectric strength; plasma-enhanced CVD; self-healing breakdown technique; short duration voltage pulses; tetraethoxysilane; Breakdown voltage; Chemical vapor deposition; Dielectric breakdown; Dielectric measurements; Dielectric thin films; Plasma chemistry; Plasma measurements; Pulse measurements; Semiconductor films; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on
  • Conference_Location
    Vasteras
  • Print_ISBN
    0-7803-4237-2
  • Type

    conf

  • DOI
    10.1109/ICSD.1998.709302
  • Filename
    709302
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=327388