Title :
Nanoscale Resistive Memory Device Using SrTiO3 Films
Author :
Karg, S. ; Meijer, G.I. ; Widmer, D. ; Stutz, R. ; Bednorz, J.G. ; Rettner, Ch.
Author_Institution :
Zurich Res. Lab., Ruschlikon
Abstract :
Resistive-oxide memory cells based on polycrystalline films of Cr-doped SrTiO3 have been investigated with regard to next-generation non-volatile memory. Crosspoint cells with an area of 200 times 200 nm2 show fast write and erase times (les 100 ns), endure 105 programming cycles and can be programmed with low currents (< 100 muA). The weak area dependence of the write and erase current give rise to desirable scaling properties.
Keywords :
chromium; nanoelectronics; random-access storage; strontium compounds; thin film devices; SrTiO3:Cr; crosspoint cells; erase current; nanoscale resistive-oxide memory device; nonvolatile memory; polycrystalline films; write current; Electrodes; Geometry; Laboratories; Nanoscale devices; Nonvolatile memory; Random access memory; Read-write memory; Scalability; Testing; Voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290584
