• DocumentCode
    3274065
  • Title

    Investigation of Reliability Characteristics of Si Nanocrystal NOR Memory Arrays

  • Author

    Jacob, S. ; Perniola, L. ; Festes, G. ; Bodnar, S. ; Coppard, R. ; Thiery, J.F. ; Pedron, T. ; Jalaguier, E. ; Boulanger, F. ; De Salvo, B. ; Deleonibus, S.

  • Author_Institution
    ATMEL Rousset, Rousset
  • fYear
    2007
  • fDate
    26-30 Aug. 2007
  • Firstpage
    71
  • Lastpage
    72
  • Abstract
    In this work, data of a 32Mb Si-NC NOR flash memory product, fabricated in a 130nm ATMEL technology platform have been presented. Measurements have shown an average threshold voltage shift of 3V, without extrinsic bits even after cycling and data retention at 150degC. An in-depth study of gate disturb has been performed, focusing on the influence of the HTO thickness.
  • Keywords
    NOR circuits; flash memories; logic gates; nanoelectronics; silicon; ATMEL technology platform; HTO thickness; Si nanocrystal NOR memory arrays; reliability characteristics; Dielectrics; Electrons; Flash memory; Jacobian matrices; Nanocrystals; Nonvolatile memory; Predictive models; Robustness; Silicon; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0753-2
  • Electronic_ISBN
    1-4244-0753-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2007.4290585
  • Filename
    4290585
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3274065