Title :
Modeling and Characterization of Program / Erasure Speed and Retention of TiN-gate MANOS (Si-Oxide-SiNx-Al2O3-Metal Gate) Cells for NAND Flash Memory
Author :
Choi, Eun-Seok ; Yoo, Hyun-Seung ; Park, Kyoung-Hwan ; Kim, Se-Jun ; Ahn, Jung-Ryul ; Lee, Myung-Shik ; Hong, Young-Ok ; Kim, Suk-Goo ; Om, Jae-Chul ; Joo, Moon-Sig ; Pyi, Seung-Ho ; Lee, Seaung-Suk ; Lee, Seok-Kiu ; Bae, Gi-Hyun
Author_Institution :
Hynix Semicond. Inc., Ichon-si Kyoungki-do
Abstract :
In this study, physical properties of different trapping nitrides were extracted, and the program efficiency of MANOS cell was explained. We also showed shallow traps were generated at trapping nitride by etching damage, and this could be cured resulting great improvement of cell performance. Lastly, erasure mechanism of TiN-gate MANOS cell was discussed with some experimental and modeling results.
Keywords :
NAND circuits; aluminium compounds; flash memories; silicon; silicon compounds; titanium compounds; MANOS cell program efficiency; NAND flash memory; Si-SiO2-SiN-Al2O3; etching damage; program-erasure speed; trapping nitrides physical properties; Carbon capture and storage; Curing; Electrodes; Electron traps; Etching; Flash memory; Ionization; Nonvolatile memory; Tin; Tunneling;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290591
