• DocumentCode
    3274303
  • Title

    Low Voltage High Speed Programming/Erasing Charge Trapping Memory with Metal-Al2O3-SiN-Si3N4-Si Structure

  • Author

    Shim, Sun Il ; Yeh, Frank C. ; Wang, X.W. ; Ma, T.P.

  • Author_Institution
    Yale Univ., New Haven
  • fYear
    2007
  • fDate
    26-30 Aug. 2007
  • Firstpage
    103
  • Lastpage
    105
  • Abstract
    SONOS-type NAND flash memory cell with metal-Al2O3-SiN-Si3N4-Si was fabricated and key characteristics were investigated. Low voltage and high-speed programming/erasing characteristics were achieved, due to low barrier height of Si3N4 and high dielectric constant of Al2O3 compared with those of SiO2. It also showed good endurance up to 10 k cycles, and more than 1.5 V memory windows after 10 years.
  • Keywords
    NAND circuits; aluminium compounds; flash memories; low-power electronics; metals; permittivity; silicon; silicon compounds; Al2O3SiNSi3N4Si; SONOS-type NAND flash memory cell; charge trapping memory erasing; dielectric constant; high speed programming-erasing; metal; Aluminum oxide; Capacitance-voltage characteristics; Electrodes; Gold; High K dielectric materials; High-K gate dielectrics; Hysteresis; Leakage current; Low voltage; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0753-2
  • Electronic_ISBN
    1-4244-0753-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2007.4290600
  • Filename
    4290600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3274303