Title :
Tunable InGaAs/InAlAs/InP far-IR detector based on plasmon resonance
Author :
Peale, Robert E. ; Saxena, Himanshu ; Buchwald, Walter R.
Author_Institution :
Univ. of Central Florida, Orlando, FL
Abstract :
An InGaAs/InP based HEMT with grating gate is investigated as a THz detector. Resonant THz absorption by two-dimensional plasmons is tunable with a gate bias.
Keywords :
aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; infrared detectors; plasmons; submillimetre wave detectors; HEMT; InGaAs-InAlAs-InP; grating gate; high electron mobility transistor; plasmon resonance; resonant THz absorption; Absorption; Detectors; Gratings; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Plasmons; Resonance; Resonant frequency;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
DOI :
10.1109/ICIMW.2008.4665559
