DocumentCode :
327565
Title :
Optical projection lithography at half the Rayleigh resolution limit by two photon exposure
Author :
Yablonovitch, E. ; Vrijen, R.B.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear :
1998
fDate :
10-14 Aug 1998
Firstpage :
126
Lastpage :
128
Abstract :
In recent years, with the advent of femtosecond pulse technology, two-photon absorption has commenced to be used for exposing photo-resists. It is natural to ask then, what is the spatial resolution of two-photon lithography? There has already been some discussion of resolution limits in two-photon, scanning confocal fluorescence microscopy. We will find that ordinary two-photon exposure of photo-resist merely enhances the photographic contrast, or gamma. While this improves the spatial resolution somewhat, it does so at the expense of a requirement for tighter control over the incident light intensity. Instead, we introduce a new type of exposure system employing a multiplicity of 2-photon excitation frequencies which interfere with one another to produce a super-resolution stationary image, exhibiting a true doubling of the spatial resolution
Keywords :
image resolution; photolithography; two-photon processes; Rayleigh limit; femtosecond pulse technology; optical projection lithography; photographic contrast; photoresist; spatial resolution; stationary image; two photon exposure; Absorption; Fluorescence; Frequency; Image resolution; Lighting control; Lithography; Microscopy; Optical pulses; Spatial resolution; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nonlinear Optics '98: Materials, Fundamentals and Applications Topical Meeting
Conference_Location :
Kauai, HI
Print_ISBN :
0-7803-4950-4
Type :
conf
DOI :
10.1109/NLO.1998.710232
Filename :
710232
Link To Document :
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