• DocumentCode
    3276558
  • Title

    Silicon carbide power device characterization for HEVs

  • Author

    Ozpineci, Burak ; Tolbert, Leon M. ; Islam, Syed K.

  • Author_Institution
    The University of Tennessee
  • fYear
    2002
  • fDate
    24-25 Oct. 2002
  • Firstpage
    93
  • Lastpage
    97
  • Abstract
    The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SIC devices in power conversion systems. In this study, findings of SIC research at Oak Ridge National Laboratory (OWL), TN, USA, including SIC device design and system modeling studies, are discussed.
  • Keywords
    Hybrid electric vehicles; Laboratories; Power electronics; Power semiconductor switches; Schottky diodes; Silicon carbide; Switching converters; Temperature; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics in Transportation, 2002
  • Conference_Location
    Auburn Hills, Michigan, USA
  • Print_ISBN
    0-7803-7492-4
  • Type

    conf

  • DOI
    10.1109/PET.2002.1185555
  • Filename
    1185555