Title :
Advances in linearised GaAs MESFET circuit design techniques
Author :
Haigh, D.G. ; Radmore, P.M. ; Parker, A.E.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. CoIl., London, UK
Abstract :
Discusses the synthesis of linearized conductance functions using GaAs MESFETs which have an approximately square-law drain current versus gate-source voltage characteristic. The functions for realization are derived and implemented in three basic circuit configurations: transconductance, self-conductance, and buffer function. The new circuits outperformed previous circuits in terms of chip area, power consumption, and efficiency. The alternative concept of voltage linearization is introduced. It was used to realize lossless buffer circuits. Optimization of FET gate widths to allow a verified realistic FET model was demonstrated
Keywords :
III-V semiconductors; Schottky gate field effect transistors; buffer circuits; field effect integrated circuits; linear integrated circuits; FET gate widths; FET model; GaAs; buffer function; chip area; efficiency; gate-source voltage; linearised GaAs MESFET circuit; linearized conductance functions; lossless buffer circuits; power consumption; self-conductance; square-law drain current; transconductance; voltage linearization; Circuit synthesis; Educational institutions; FETs; Gallium arsenide; MESFET circuits; Mathematics; Physics computing; Signal synthesis; Transconductance; Voltage;
Conference_Titel :
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0593-0
DOI :
10.1109/ISCAS.1992.230375
