Homodyne mixing at 150 GHz in a high electron mobility transistor

Author

Ortolani, M. ; Di Gaspare, A. ; Giovine, E. ; Evangelisti, F. ; Doria, A. ; Giovenale, E. ; Gallerano, G.P. ; Messina, G. ; Spassovsky, I. ; Cetronio, A. ; Lanzieri, C. ; Peroni, M. ; Foglietti, V.

Author_Institution

CNR, Ist. di Fotonica e Nanotecnol., Rome

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

2

Abstract

We explore the possibility of using an AlGaN/GaN high electron mobility transistor (HEMT) as a free-space coupled homodyne mixer. We used 150 GHz radiation from a Free Electron Laser, hence 5 times higher than the HEMT nominal band center at 30 GHz. The homodyne mixing provides a quasi-dc output signal, which makes the HEMT a detector of the radiation at 150 GHz.

Keywords

III-V semiconductors; aluminium compounds; free electron lasers; gallium compounds; high electron mobility transistors; semiconductor heterojunctions; AlGaN-GaN; HEMT; free electron laser; free-space coupled homodyne mixer; frequency 150 GHz; high electron mobility transistor; homodyne mixing; quasidc output signal; semiconductor heterostructures; Aluminum gallium nitride; Electron beams; Free electron lasers; Gallium nitride; HEMTs; MODFETs; Masers; Quantum cascade lasers; Radiation detectors; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665651

Filename

4665651