• DocumentCode
    3276981
  • Title

    Temperature behavior of combination selection based mismatch calibration with 65 nm CMOS technology

  • Author

    Marku, Joona ; Poikonen, Jonne ; Paasio, Ari

  • Author_Institution
    Dept. of Inf. Technol., Univ. of Turku, Turku, Finland
  • fYear
    2009
  • fDate
    9-11 Sept. 2009
  • Firstpage
    311
  • Lastpage
    314
  • Abstract
    The temperature behaviour of a combination selection based mismatch calibration is discussed. The functionality of the calibration structure has already been presented. Clear benefits in implementation area and accuracy can be reached when using mismatch calibration based on combination selection of fine-tuning transistors. However, with the high accuracy requirements, the effects of temperature must be taken into the account. Temperature compensation circuitry for combination selection based mismatch calibration is developed, designed and simulated in digital 65 nm CMOS technology. The new temperature compensated and mismatch calibrated current source achieves 99% accuracy in 4¿ confidence over the temperature range of 40 degrees in centigrade. This range can still be extended by recalibrating the current source in intervals of 20 degrees in centigrade.
  • Keywords
    CMOS integrated circuits; integrated circuit design; CMOS technology; combination selection based mismatch calibration; fine-tuning transistors; size 65 nm; temperature 20 C; CMOS technology; Calibration; Counting circuits; Current measurement; Information technology; MOSFETs; Microelectronics; Temperature dependence; Temperature distribution; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOC Conference, 2009. SOCC 2009. IEEE International
  • Conference_Location
    Belfast
  • Print_ISBN
    978-1-4244-4940-8
  • Electronic_ISBN
    978-1-4244-4941-5
  • Type

    conf

  • DOI
    10.1109/SOCCON.2009.5398033
  • Filename
    5398033