DocumentCode
3276981
Title
Temperature behavior of combination selection based mismatch calibration with 65 nm CMOS technology
Author
Marku, Joona ; Poikonen, Jonne ; Paasio, Ari
Author_Institution
Dept. of Inf. Technol., Univ. of Turku, Turku, Finland
fYear
2009
fDate
9-11 Sept. 2009
Firstpage
311
Lastpage
314
Abstract
The temperature behaviour of a combination selection based mismatch calibration is discussed. The functionality of the calibration structure has already been presented. Clear benefits in implementation area and accuracy can be reached when using mismatch calibration based on combination selection of fine-tuning transistors. However, with the high accuracy requirements, the effects of temperature must be taken into the account. Temperature compensation circuitry for combination selection based mismatch calibration is developed, designed and simulated in digital 65 nm CMOS technology. The new temperature compensated and mismatch calibrated current source achieves 99% accuracy in 4¿ confidence over the temperature range of 40 degrees in centigrade. This range can still be extended by recalibrating the current source in intervals of 20 degrees in centigrade.
Keywords
CMOS integrated circuits; integrated circuit design; CMOS technology; combination selection based mismatch calibration; fine-tuning transistors; size 65 nm; temperature 20 C; CMOS technology; Calibration; Counting circuits; Current measurement; Information technology; MOSFETs; Microelectronics; Temperature dependence; Temperature distribution; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
SOC Conference, 2009. SOCC 2009. IEEE International
Conference_Location
Belfast
Print_ISBN
978-1-4244-4940-8
Electronic_ISBN
978-1-4244-4941-5
Type
conf
DOI
10.1109/SOCCON.2009.5398033
Filename
5398033
Link To Document