• DocumentCode
    3277310
  • Title

    Thermal design and measurements of IGBT power modules: transient and steady state

  • Author

    He, Jun ; Mehrotra, Vivek ; Shaw, Michael C.

  • Author_Institution
    Dept. of Design & Reliability, Rockwell Sci. Centre, Thousand Oaks, CA, USA
  • Volume
    2
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    1440
  • Abstract
    The spatial temperature distributions on IGBT devices in 6-pack power modules have been measured during both transient and steady-states using ultra high speed infrared microscopy. Power modules examined included a commercial 6-pack module and a miniaturized inverter. The modules were constructed using both Al2O3 and AlN direct bond copper (DBC) substrates and an insulated metal substrate (IMS). The effects of IGBT bonding pad design and layout, bond wire arrangement and module curvature on the temperature distribution were measured and analyzed. Thermal performances of all the modules were characterized by the junction-to-case, case-to-sink and sink-to-ambient thermal resistance. The trade-offs between AlN, Al2O3 , and IMS substrates and the replacement of conventional solder with a conductive adhesive are discussed from thermal, reliability and cost viewpoints
  • Keywords
    adhesives; insulated gate bipolar transistors; invertors; modules; substrates; temperature distribution; thermal resistance measurement; Al2O3; AlN; Cu; IGBT bonding pad design; IGBT devices; IGBT power modules; bond wire arrangement; case-to-sink thermal resistance; conductive adhesive; cost; direct bond copper substrates; insulated metal substrate; junction-to-case thermal resistance; layout; miniaturized inverter; module curvature; power modules; reliability; sink-to-ambient thermal resistance; spatial temperature distributions; temperature distribution; thermal design; thermal performances; thermal resistance measurements; ultra high speed infrared microscopy; Bonding; Insulated gate bipolar transistors; Inverters; Microscopy; Multichip modules; Power measurement; Steady-state; Temperature distribution; Thermal resistance; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
  • Conference_Location
    Phoenix, AZ
  • ISSN
    0197-2618
  • Print_ISBN
    0-7803-5589-X
  • Type

    conf

  • DOI
    10.1109/IAS.1999.801689
  • Filename
    801689