Design and Characterization of Polarization-Reversed AlInGaN Based Ultraviolet Light-Emitting Diode

Author

Yi-An Chang ; Yu-Rui Lin ; Jih-Yuan Chang ; Tsun-Hsin Wang ; Yen-Kuang Kuo

Author_Institution

Dept. of Phys., Nat. Changhua Univ. of Educ., Changhua, Taiwan

Volume

49

Issue

6

fYear

2013

fDate

Jun-13

Firstpage

553

Lastpage

559

Abstract

The effect of using polarization-reversed AlInGaN-based quantum well active region in ultraviolet light-emitting diode is numerically investigated. By employing Al_0.54In_0.26Ga_0.20N and Al_0.83In_0.17N as barrier and electron blocking layers, which ably reverse the direction of the polarization in Al_0.005In_0.02Ga_0.975N quantum well and provide sufficient potential barrier height to confine electrons in the conduction band, simulation results show that the energy band profile of the Al_0.005In_0.02Ga_0.975N quantum well is tilted up, resulting in better carrier confinement and more uniform distribution of carriers in the quantum well. Moreover, the overlap between electron and hole wave functions is increased and the Auger recombination is suppressed effectively, which in turn improves the radiative recombination efficiency.

Keywords

Auger effect; III-V semiconductors; aluminium compounds; conduction bands; gallium compounds; indium compounds; light emitting diodes; optical design techniques; quantum well devices; semiconductor quantum wells; wave functions; wide band gap semiconductors; Al_0.005In_0.02Ga_0.975N; Al_0.54In_0.26Ga_0.20N-Al_0.83In_0.17N; Auger recombination; barrier layer; carrier confinement; conduction band; electron blocking layer; electron confinement; energy band profile; hole wave functions; optical design; polarization-reversed based ultraviolet light-emitting diode; polarization-reversed quantum well; potential barrier height; radiative recombination efficiency; Aluminum gallium nitride; Charge carrier processes; Current density; Light emitting diodes; Materials; Radiative recombination; AlInGaN; numerical simulation; reversed polarization; ultraviolet light-emitting diodes;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2013.2259467

Filename

6507317