DocumentCode
3277618
Title
Heavy-ion irradiated GaAs crystals for high-efficient generation of terahertz radiation
Author
Nazarov, Maxim M. ; Shepelev, Andrey V. ; Shkurinov, Alexander P. ; Skuratov, Vladimir A.
Author_Institution
M.V.Lomonosov Moscow State Univ., Moscow
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
1
Lastpage
1
Abstract
GaAs crystals with nanochannels produced as a result of heavy-ion irradiation at the energy of 100 MeV demonstrate a giant (more than 15 times) increasing of efficiency of the THz surface emission. The efficiency strongly depends on the fluence, orientation of nanochannels and temperature. Mechanisms of the efficiency increasing are discussed.
Keywords
III-V semiconductors; gallium arsenide; ion beam effects; microwave photonics; nanostructured materials; submillimetre wave generation; surface structure; GaAs; electron volt energy 100 MeV; heavy-ion irradiation; nanochannels; semiconductor crystal; terahertz radiation generation; terahertz surface emission; Crystalline materials; Crystallization; Crystals; Gallium arsenide; Optical materials; Optical surface waves; Semiconductor materials; Surface topography; Temperature dependence; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location
Pasadena, CA
Print_ISBN
978-1-4244-2119-0
Electronic_ISBN
978-1-4244-2120-6
Type
conf
DOI
10.1109/ICIMW.2008.4665680
Filename
4665680
Link To Document