Title :
Heavy-ion irradiated GaAs crystals for high-efficient generation of terahertz radiation
Author :
Nazarov, Maxim M. ; Shepelev, Andrey V. ; Shkurinov, Alexander P. ; Skuratov, Vladimir A.
Author_Institution :
M.V.Lomonosov Moscow State Univ., Moscow
Abstract :
GaAs crystals with nanochannels produced as a result of heavy-ion irradiation at the energy of 100 MeV demonstrate a giant (more than 15 times) increasing of efficiency of the THz surface emission. The efficiency strongly depends on the fluence, orientation of nanochannels and temperature. Mechanisms of the efficiency increasing are discussed.
Keywords :
III-V semiconductors; gallium arsenide; ion beam effects; microwave photonics; nanostructured materials; submillimetre wave generation; surface structure; GaAs; electron volt energy 100 MeV; heavy-ion irradiation; nanochannels; semiconductor crystal; terahertz radiation generation; terahertz surface emission; Crystalline materials; Crystallization; Crystals; Gallium arsenide; Optical materials; Optical surface waves; Semiconductor materials; Surface topography; Temperature dependence; Ultrafast optics;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
DOI :
10.1109/ICIMW.2008.4665680
