Title :
A low-power 10 Gb/s AGC optical postamplifier in SiGe
Author :
Kucharski, Daniel ; Kornegay, Kevin T.
Author_Institution :
Cornell Broadband Commun. Res. Lab., Cornell Univ., Ithaca, NY, USA
Abstract :
A 10 Gb/s automatic gain control amplifier for use in optical receivers was implemented in a SiGe process with fT=45 GHz. Active peaking techniques were used to achieve a maximum gain of 48 dB with 7.8 GHz of bandwidth. The amplifier demonstrates less than 0.5 dB of peak-to-peak output amplitude variation over a 50 dB input amplitude range. It consumes 30 mW of power from a 3.3 V supply and remains functional at voltages as low as 2.7 V. The amplifier core occupies 0.1 mm2 and requires no external components.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; automatic gain control; low-power electronics; optical receivers; semiconductor materials; wideband amplifiers; 10 Gbit/s; 10 MHz to 7.8 GHz; 2.7 V; 3.3 V; 30 mW; 45 GHz; 48 dB; BiCMOS integrated circuits; SiGe; active peaking techniques; automatic gain control amplifier; broadband amplifiers; low-power optical postamplifier; optical receivers; peak-to-peak output amplitude variation; Broadband amplifiers; Circuits; Gain control; Germanium silicon alloys; Jitter; Optical amplifiers; Optical attenuators; Optical receivers; Silicon germanium; Stimulated emission;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320514
