Title :
Ordered incorporation of dopants in GaAs: a new route to overcome solubility limits
Author :
Daweritz, L. ; Schutzendube, P. ; Reiche, M. ; Ploog, K.H.
Author_Institution :
Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany
Abstract :
An analysis of atomic configurations during Si incorporation in GaAs by MBE has been performed using RHEED and reflectance difference spectroscopy (RDS). It provides a direct explanation for the different findings of the maximum sheet electron concentration in Si-delta doped GaAs reported in literature
Keywords :
III-V semiconductors; electron density; gallium arsenide; molecular beam epitaxial growth; reflection high energy electron diffraction; reflectivity; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; solid solubility; GaAs:Si; MBE; RHEED; Si incorporation; Si-delta doped GaAs; atomic configurations; dopants ordered incorporation; maximum sheet electron concentration; reflectance difference spectroscopy; solubility limits; Anisotropic magnetoresistance; Atomic layer deposition; Doping; Electrons; Gallium arsenide; Performance analysis; Reflectivity; Sheet materials; Spectroscopy; Surface reconstruction;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711569
