DocumentCode :
3278576
Title :
Reverse Short-Channel Effects due to the Lateral Diffusion of the Point-Defects Induced by the Source/Drain Ion Implantation
Author :
Kunikiyo, Tatsuya ; Mitsui, Katsuyoshi ; Fujinaga, Masato ; Uchida, Tetsuya ; Kotani, Norihiko ; Akasaka, Yoichi
Author_Institution :
Mitsubishi Electric Corporation
fYear :
1992
fDate :
31 May-1 Jun 1992
Firstpage :
51
Lastpage :
56
Keywords :
Atmosphere; Boron; Fabrication; Implants; Ion implantation; Laboratories; Large scale integration; MOSFET circuits; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. NUPAD IV. Workshop on
Print_ISBN :
0-7803-0516-7
Type :
conf
DOI :
10.1109/NUPAD.1992.673846
Filename :
673846
Link To Document :
بازگشت