Title :
III-V based room temperature THz detectors
Author :
Perera, A. G Unil ; Jayaweera, P. Viraj ; Matsik, Steven G. ; Liu, Hui Chun
Author_Institution :
Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA
Abstract :
Results are reported on a GaAs/AlGaAs based THz detector operating up to room temperature. The detector gave a response of 4 A/W at 330 K and 0.015 A/W at 309 K indicating the response is due to effects of thermally generated carriers. By optimizing the material it should be possible to improve the detector response.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor heterojunctions; terahertz wave detectors; thermally stimulated currents; GaAs-AlGaAs; III-V material; THz detectors; bolometer; p-type intraband detectors; temperature 309 K; temperature 330 K; thermally generated carriers; Absorption; Astronomy; Design optimization; Detectors; Frequency; Gallium arsenide; III-V semiconductor materials; Physics; Temperature distribution; Voltage;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
DOI :
10.1109/ICIMW.2008.4665744
