Implementation issues for ultra narrow band switched-capacitor filters

Author

Shafeeu, Hassan ; Betts, Andrew K. ; Taylor, John T.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

Volume

5

fYear

1992

fDate

10-13 May 1992

Firstpage

2304

Abstract

The authors describe a project to investigate the properties of the same sample correction finite gain insensitive pseudo-N-path (SSC FGI-PNP) filters. They explore the N×M-path filter architecture and its building blocks. The final circuit was laid out using MIETEC 2.4-μm double-poly and double-metal CMOS technology. The simulated circuit behavior is described and its limitations are identified. Simulation results suggest that the performance of the SSC FGI-PNP filters is considerably enhanced when compared to the conventional PNP filters at an extra silicon cost of approximately 50%. The effect of gain on the center frequency and Q of the PNP circuit, which are the crucial parameters for N×M-path filters has also been investigated

Keywords

CMOS integrated circuits; switched capacitor filters; 2.4 micron; MIETEC; SC filters; active filters; double-metal CMOS technology; double-poly; finite gain insensitive; monolithic IC; pseudo-N-path; same sample correction; simulated circuit behavior; switched-capacitor filters; ultra narrow band; ultranarrowband type; Band pass filters; CMOS technology; Capacitance; Circuit testing; Clocks; Dynamic range; Frequency; Integrated circuit technology; Integrated circuit testing; Narrowband;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0593-0

Type

conf

DOI

10.1109/ISCAS.1992.230498

Filename

230498