Title :
90 nm CMOS MMIC amplifier
Author :
Masud, M. Anowar ; Zirath, Herbert ; Ferndahl, Mattias ; Vickes, Hans-Olof
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
Small signal amplifiers at 20 and 40 GHz, based on a 90 nm CMOS process are demonstrated. A gain of 5.8 dB at 20 GHz for single stage has been obtained with a 1 dB compression point at 1 dBm. The corresponding figures for the 40 GHz amplifiers are 6 dB and -5.75 dBm. Noise figure for the 20 GHz amplifier is 6.4 dB. Both single gate access and double gate access transistors have been used in the design. DC power consumption of the 20 GHz single stage amplifier was found to be 10 mW whereas for the 40 GHz double stage amplifier it is approximately 19 mW. Total circuit area is 0.7×0.8 mm2 for the single stage and 1×0.7 mm2 for the 40 GHz double stage amplifier.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; 10 mW; 19 mW; 20 GHz; 40 GHz; 5.8 dB; 6 dB; 6.4 dB; 90 nm; CMOS MMIC amplifier; double gate access transistors; single gate access transistors; small signal amplifiers; CMOS process; CMOS technology; MMICs; Microwave technology; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; Noise figure; Power amplifiers; Transmission line measurements;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320570
