Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetector for operation at 1.3 and 1.55 μm

Author

Kollakowski, St. ; Droge, E. ; Bottcher, E.H. ; Strittmatter, A. ; Reimann, O. ; Bimberg, D.

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany

fYear

1998

fDate

11-15 May 1998

Firstpage

266

Lastpage

268

Abstract

High-speed multi-wavelength waveguide-integrated metal-semiconductor-metal (MSM) photodetectors based on MOCVD grown InP/lnGaAs/InAlGaAs layers are reported. The evanescent field coupled detectors have an absorbing layer thickness of only 150 nm and an electrode feature size as small as 0.3 μm. An internal coupling efficiency of ⩾90% has been achieved for detector lengths as short as 20 μm and 30 μm at 1.3 and 1.55 μm wavelength, respectively. A 3-dB bandwidth of 50 GHz at 1.55 μm wavelength has been obtained

Keywords

III-V semiconductors; MOCVD coatings; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; infrared detectors; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; optical waveguides; photodetectors; semiconductor epitaxial layers; 0.3 mum; 1.3 mum; 1.55 mum; 150 nm; 20 mum; 30 mum; 50 GHz; 90 percent; InP-InGaAs-InAlGaAs; MOCVD layers; absorbing layer thickness; bandwidth; electrode feature size; evanescent field coupled detectors; high-speed multi-wavelength photodetector; internal coupling efficiency; waveguide-integrated MSM photodetector; Bandwidth; Detectors; Electrodes; Etching; Indium gallium arsenide; Indium phosphide; MOCVD; Optical coupling; Optical waveguides; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712453

Filename

712453