Title :
Electroless plating of copper and nickel via a Sn-free process on dielectric SiLK® surface
Author :
Yu, W.H. ; Kang, E.T. ; Neoh, K.G. ; Zhang, Yan ; Ang, S.S. ; Tay, Andrew A O
Author_Institution :
Dept. of Chem. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Electroless plating of copper and nickel via a one-step, Sn-free activation process was carried out effectively on the SiLK® coating on [100]-oriented silicon wafer (SiLK-Si substrate) modified by UV-induced surface graft copolymerization with several N-containing vinyl monomers, including 1-vinylilidazole (VIDz), 2-vinylpyridine (2VP), and 4-vinylpyridine (4VP). The chemical composition and topography of the graft-copolymerized SiLK-Si surfaces were characterized by X-ray photoelectron spectroscopy (XPS) and AFM, respectively. The VIDz, 2VP, and 4VP graft-copolymerized SiLK-Si surfaces could be directly activated by PdCl2 in the absence of prior sensitization by a tin compound, such as SnCl2, (the Sn-free activation process) for the subsequent electroless deposition of copper and nickel. The Sn-free process involved initially the chemisorption of palladium, in the complex form, on the pyridine or imidazole group of the graft polymer. The 180°-peel adhesion strength of the electrolessly deposited copper and nickel with the VIDz, 2VP, and 4VP graft-copolymerized SiLK-Si surfaces were much higher than that of the electrolessly deposited copper and nickel with the pristine or the Ar plasma-treated SiLK-Si surfaces.
Keywords :
X-ray photoelectron spectra; adhesion; atomic force microscopy; chemisorption; copper; dielectric thin films; electroless deposition; elemental semiconductors; nickel; palladium compounds; polymerisation; semiconductor device metallisation; silicon; surface composition; surface topography; 1-vinylilidazole; 2-vinylpyridine; 2VP; 4-vinylpyridine; 4VP; AFM; Cu; N-containing vinyl monomers; Ni; PdCl2; Si; SiLK coating; UV-induced surface graft copolymerization; VIDz; X-ray photoelectron spectroscopy; XPS; [100]-oriented silicon wafer; complex form palladium chemisorption; copper plating; dielectric SiLK surface; electroless plating; graft polymer; imidazole group; nickel plating; one-step Sn-free activation process; peel adhesion strength; pyridine group; surface composition; surface topography; Chemicals; Coatings; Copper; Dielectric substrates; Nickel; Palladium; Silicon; Spectroscopy; Surface topography; Tin compounds;
Conference_Titel :
Electronics Packaging Technology Conference, 2002. 4th
Print_ISBN :
0-7803-7435-5
DOI :
10.1109/EPTC.2002.1185710