Author :
Siew, Y.K. ; Jourdan, Nicolas ; Barbarin, Y. ; Machillot, J. ; Demuynck, S. ; Croes, Kristof ; Tseng, J. ; Ai, H. ; Tang, Ju ; Naik, Mayur ; Wang, Peng ; Narasimhan, M. ; Abraham, M. ; Cockburn, A. ; Bommels, J. ; Tokei, Z.
Abstract :
CVD Mn-based self-formed barrier (SFB) has been evaluated and integrated for reliability and RC delay assessment. Intrinsic TDDB lifetimes were extracted from planar capacitor measurement. A comparable lifetime as the TaN/Ta reference was obtained on SiO2 and porous low-k with a thin oxide liner. Good reliability performance was demonstrated after integration. Compared to conventional barrier, significant RC reduction (up to 45% at 40nm half pitch) and lower via resistance which become more beneficial upon scaling present CVD Mn-based SFB as an attractive candidate for future interconnect technology.
Keywords :
chemical vapour deposition; manganese; semiconductor device breakdown; semiconductor device metallisation; semiconductor device reliability; silicon compounds; CVD self formed barrier; Mn; RC delay assessment; SiO2; advanced interconnect technology; planar capacitor measurement; porous low k; thin oxide liner; Adhesives; Dielectric measurement; Electrical resistance measurement; Manganese; Reliability; Resistance; Vehicles;
