DocumentCode :
3280111
Title :
The electromigration short — Length effect and its impact on circuit reliability
Author :
Oates, Anthony S.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
fYear :
2013
fDate :
13-15 June 2013
Firstpage :
1
Lastpage :
3
Abstract :
The short-length effect, whereby electromigration is eliminated due a mechanical stress-gradient induced backflow has a profound impact on the characteristics of electromigration failure. Here we review our recent studies of electromigration failure at short lengths in Cu/low-k interconnects. We show that voiding failures can occur at current densities below the critical value. We develop a model that accurately predicts failure distributions as a function of stress variables, conductor geometry, and presence of passive reservoirs. We also discuss the scaling of electromigration at short - lengths, and show that failure times decrease even more rapidly than long-lengths with technology scaling.
Keywords :
circuit reliability; copper; critical current density (superconductivity); electromigration; Cu; circuit reliability; conductor geometry; critical value; current densities; electromigration failure; failure distributions; low k interconnects; mechanical stress gradient induced backflow; passive reservoirs; short lengths; stress variables; voiding failures; Conductors; Current density; Electromigration; Geometry; Monte Carlo methods; Reservoirs; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0438-9
Type :
conf
DOI :
10.1109/IITC.2013.6615553
Filename :
6615553
Link To Document :
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