Extremely non-porous ultra-low-k SiOCH (k=2.3) with sufficient modulus (>10 GPa), high Cu diffusion barrier and high tolerance for integration process formed by large-radius neutral-beam enhanced CVD

Author

Kikuchi, Yutaka ; Wada, Atsushi ; Samukawa, Seiji

Author_Institution

Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan

fYear

2013

fDate

13-15 June 2013

Firstpage

1

Lastpage

3

Abstract

We developed a practical large-radius neutral beam enhanced CVD with a dimethoxy tetramethy ldisiloxane (DMOTMDS) to form low-k SiOCH film on 8-inch Si wafers. We fabricated extremely non-porous film with an ultra-low k-value of 2.3 and a sufficient modulus (>10 GPa). This particular film did not show any damage from the oxygen plasma and acid or alkali solutions used in the fabrication process. Furthermore, the dense film almost completely resisted Cu diffusion into the film during thermal annealing.

Keywords

annealing; chemical vapour deposition; copper; diffusion barriers; elastic moduli; low-k dielectric thin films; silicon compounds; Cu; Si; SiOCH; acid solutions; alkali solutions; diffusion barrier; dimethoxy tetramethy ldisiloxane; integration process; large-radius neutral-beam enhanced CVD; modulus; nonporous ultra-low-k SiOCH; oxygen plasma; size 8 inch; thermal annealing; tolerance; Annealing; Carbon; Dielectric constant; Films; Particle beams; Plasmas; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2013 IEEE International

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0438-9

Type

conf

DOI

10.1109/IITC.2013.6615563

Filename

6615563