DocumentCode
3280729
Title
SiGe HBTs for millimeter-wave applications with simultaneously optimized fT and fmax of 300 GHz
Author
Rieh, J.-S. ; Greenberg, D. ; Khater, M. ; Schonenberg, K.T. ; Jeng, S.J. ; Pagette, F. ; Adam, T. ; Chinthakindi, A. ; Florkey, J. ; Jagannathan, B. ; Johnson, J. ; Krishnasamy, R. ; Sanderson, D. ; Schnabel, C. ; Smith, P. ; Stricker, Alexander ; Sweene
Author_Institution
IBM Semicond. R & D Center, Hopewell Junction, NY, USA
fYear
2004
fDate
6-8 June 2004
Firstpage
395
Lastpage
398
Abstract
Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs, with simultaneously optimized fT and fmax of >300 GHz, are developed. To the author´s knowledge, this is the first report of fT and fmax both exceeding 300 GHz for any Si-based transistor. BVCEO and BVCBO are 1.6 V and 5.5 V, respectively, with peak current gain of 660. Noise measurement shows Fmin of 0.45 dB and 1.4 dB at 10 GHz and 25 GHz with associate gain of 14 dB and 8 dB, respectively. The results indicate SiGe HBTs are highly suitable for the rapidly expanding millimeter-wave applications.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; optimisation; semiconductor materials; 1.6 V; 10 GHz; 14 dB; 25 GHz; 300 GHz; 5.5 V; 8 dB; SiGe; heterojunction bipolar transistor; mm-wave HBT; optimized frequency characteristics; peak current gain; CMOS technology; Contact resistance; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave communication; Millimeter wave measurements; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-8333-8
Type
conf
DOI
10.1109/RFIC.2004.1320632
Filename
1320632
Link To Document